@inproceedings{e0f9ebdcc1114d26be8f0ba3ca684fff,
title = "Level-shifter free approach for multi-Vdd SOTB employing adaptive Vt modulation for pMOSFET",
abstract = "This paper proposes a level-shifter free (LSF) approach for multi-VDD design to employ a combination of body bias control and a superior threshold-voltage (Vt) modulation capability of SOTB (Silicon on Thin BOX) devices. We applied this approach to a microprocessor test chip with low-voltage (VDDL) and high-voltage (VDDH) domains, and fabricated it in a 65nm SOTB technology. Measurement results demonstrated that the chip correctly operates at VDDL=0.6V and VDDH=1.2V under the reverse-body-bias (RBB) of 2V for pMOS transistors in the VDDH domain while suppressing the static dc current.",
keywords = "SOTB, body bias control, level shifter, multi-VDD",
author = "Kimiyoshi Usami and Shunsuke Kogure and Yusuke Yoshida and Ryo Magasaki and Hideharu Amano",
note = "Funding Information: ACKNOWLEDGMENT This work was partially supported by JSPS KAKENHI S Grant Number 25220002. This work was supported by VLSI Design and Education Center (VDEC), the University of Tokyo in collaboration with Synopsys, Inc. and Cadence Design Systems, Inc. Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 ; Conference date: 16-10-2017 Through 18-10-2017",
year = "2018",
month = mar,
day = "7",
doi = "10.1109/S3S.2017.8309226",
language = "English",
series = "2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--3",
booktitle = "2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017",
}