TY - JOUR
T1 - Loss increase of (LuNdBi)3(FeAl)5 O12 films caused by sputter etching
AU - Yokoi, Hideki
AU - Mizumoto, Tetsuya
AU - Ida, Takehiro
AU - Kozakai, Kazuki Kozakai
AU - Naito, Yoshiyuki
PY - 1994/11
Y1 - 1994/11
N2 - Rib waveguides, which are made of magnetic garnet films of composition (LuNdBi)3(FeAl)5O12 (LNB), fabricated by Ar sputter etching have large propagation loss in comparison with LNB slab waveguides. X-ray photoelectron spectroscopy (XPS) is used to investigate chemical states of constituent elements existing in the surface layer where a Ti mask has been deposited during the etching process. The analysis shows that Fe chemical shift due to Ar+ ion bombardment can cause increase in the optical absorption loss, and hence the propagation loss. It is effective for suppressing the loss increase to employ a SiO2 mask deposited onto LNB film instead of a Ti mask.
AB - Rib waveguides, which are made of magnetic garnet films of composition (LuNdBi)3(FeAl)5O12 (LNB), fabricated by Ar sputter etching have large propagation loss in comparison with LNB slab waveguides. X-ray photoelectron spectroscopy (XPS) is used to investigate chemical states of constituent elements existing in the surface layer where a Ti mask has been deposited during the etching process. The analysis shows that Fe chemical shift due to Ar+ ion bombardment can cause increase in the optical absorption loss, and hence the propagation loss. It is effective for suppressing the loss increase to employ a SiO2 mask deposited onto LNB film instead of a Ti mask.
KW - (LuNdBi)(FeAl) O
KW - Optical absorption loss
KW - Reactive ion etching
KW - Rib waveguide
KW - Sputter etching
KW - X-ray photoelectron spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=84957340490&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84957340490&partnerID=8YFLogxK
U2 - 10.1143/JJAP.33.6355
DO - 10.1143/JJAP.33.6355
M3 - Article
AN - SCOPUS:84957340490
SN - 0021-4922
VL - 33
SP - 635
EP - 639
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 11R
ER -