Low dark current GaN Schottky UV photodiodes using oxidised IrNi Schottky contact

H. Jiang; T. Egawa; H. Ishikawa; Y. B. Dou; C. L. Shao; T. Jimbo

doi:10.1049/el:20031039

Low dark current GaN Schottky UV photodiodes using oxidised IrNi Schottky contact

H. Jiang, T. Egawa, H. Ishikawa, Y. B. Dou, C. L. Shao, T. Jimbo

研究成果: Article › 査読

7 被引用数 (Scopus)

抄録

Ir/Ni/Ir metallisation was employed as Schottky contacts of GaN Sohottky photodiodes. After annealing at 500°C in O₂ for 1 min, the Schottky contact achieved the maximum barrier height of 1.28 eV and the minimum dark current densities of 1.8 × 10^-10 A/cm² at -5 V bias. The peak responsivity is 105 mA/ W at zero bias and increases to 150 mA/W at -15 V bias. The detectivity was estimated as 5.8 × 10¹⁵ cmHz^1/2W^-1 at zero bias.

本文言語	English
ページ（範囲）	1604-1606
ページ数	3
ジャーナル	Electronics Letters
巻	39
号	22
DOI	https://doi.org/10.1049/el:20031039
出版ステータス	Published - 2003 11月 22
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

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10.1049/el:20031039

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title = "Low dark current GaN Schottky UV photodiodes using oxidised IrNi Schottky contact",

abstract = "Ir/Ni/Ir metallisation was employed as Schottky contacts of GaN Sohottky photodiodes. After annealing at 500°C in O2 for 1 min, the Schottky contact achieved the maximum barrier height of 1.28 eV and the minimum dark current densities of 1.8 × 10-10 A/cm2 at -5 V bias. The peak responsivity is 105 mA/ W at zero bias and increases to 150 mA/W at -15 V bias. The detectivity was estimated as 5.8 × 1015 cmHz1/2W-1 at zero bias.",

author = "H. Jiang and T. Egawa and H. Ishikawa and Dou, {Y. B.} and Shao, {C. L.} and T. Jimbo",

year = "2003",

month = nov,

day = "22",

doi = "10.1049/el:20031039",

language = "English",

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journal = "Electronics Letters",

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TY - JOUR

T1 - Low dark current GaN Schottky UV photodiodes using oxidised IrNi Schottky contact

AU - Jiang, H.

AU - Egawa, T.

AU - Ishikawa, H.

AU - Dou, Y. B.

AU - Shao, C. L.

AU - Jimbo, T.

PY - 2003/11/22

Y1 - 2003/11/22

N2 - Ir/Ni/Ir metallisation was employed as Schottky contacts of GaN Sohottky photodiodes. After annealing at 500°C in O2 for 1 min, the Schottky contact achieved the maximum barrier height of 1.28 eV and the minimum dark current densities of 1.8 × 10-10 A/cm2 at -5 V bias. The peak responsivity is 105 mA/ W at zero bias and increases to 150 mA/W at -15 V bias. The detectivity was estimated as 5.8 × 1015 cmHz1/2W-1 at zero bias.

AB - Ir/Ni/Ir metallisation was employed as Schottky contacts of GaN Sohottky photodiodes. After annealing at 500°C in O2 for 1 min, the Schottky contact achieved the maximum barrier height of 1.28 eV and the minimum dark current densities of 1.8 × 10-10 A/cm2 at -5 V bias. The peak responsivity is 105 mA/ W at zero bias and increases to 150 mA/W at -15 V bias. The detectivity was estimated as 5.8 × 1015 cmHz1/2W-1 at zero bias.

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DO - 10.1049/el:20031039

M3 - Article

AN - SCOPUS:0242721380

SN - 0013-5194

VL - 39

SP - 1604

EP - 1606

JO - Electronics Letters

JF - Electronics Letters

IS - 22

ER -

Low dark current GaN Schottky UV photodiodes using oxidised IrNi Schottky contact

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