抄録
The first measurement of low-frequency noise performance for self-aligned InAIAs/InGaAs HBTs is reported. The l/f noise obtained was around 20 dB lower than that for AlGaAs/GaAs HBTs at a fixed frequency, which is considered to be caused by the low surface recombination velocity of InGaAs.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1439-1441 |
| ページ数 | 3 |
| ジャーナル | Electronics Letters |
| 巻 | 26 |
| 号 | 18 |
| DOI | |
| 出版ステータス | Published - 1990 1月 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学