Low Noise and Low Distortion Performances of an AlGaN/GaN HFET

Yutaka Hirose, Yoshito Ikeda, Motonori Ishii, Tomohiro Murata, Kaoru Inoue, Tsuyoshi Tanaka, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo

研究成果: Article査読

15 被引用数 (Scopus)


We present ultra low noise- and wide dynamic range performances of an AlGaN/GaN heterostructure FET (HFET). An HFET fabricated on a high quality epitaxial layers grown on a semi-insulating SiC substrate exhibited impressively low minimum noise figure (NFmin) of 0.4 dB with 16 dB associated gain at 2 GHz. The low NF (near NFmin) operation was possible in a wide drain bias voltage range, i.e. from 3 V to 15 V. At the same time, the device showed low distortion character as indicated by the high third order input intercept point (IIP3), +13dBm. The excellent characteristics are attributed to three major factors: (1) high quality epitaxial layers that realized a high transconductance and very low buffer leakage current; (2) excellent device isolation made by selective thermal oxidation; (3) ultra low gate leakage current realized by Pd based gate. The results demonstrate that the AlGaN/GaN HFET is a strong candidate for front-end LNAs in various mobile communication systems where both the low noise and the wide dynamic range are required.

ジャーナルIEICE Transactions on Electronics
出版ステータスPublished - 2003 10月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学


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