@article{b2a4f8c35bff490a82daf0d343cd6912,
title = "Low resistivity p-ZnO films fabricated by sol-gel spin coating",
abstract = "N-doped and In-N-codoped ZnO films were fabricated on quartz glass substrate by sol-gel spin coating. Their p-type conductivities were characterized by the Hall measurements, revealing low resistivities of the order of 10-1 Ω cm. Thin-film junctions comprising an undoped ZnO layer and a N-doped ZnO layer displayed the typical rectifying characteristics, suggesting formation of p-n homojunctions at the interfaces.",
author = "Yongge Cao and Lei Miao and Sakae Tanemura and Masaki Tanemura and Yohei Kuno and Yasuhiko Hayashi",
note = "Funding Information: This research was financially supported by the NITECH 21st Century COE Program for World Ceramic Center for Environmental Harmony. The authors greatly acknowledge Professor Dr. M. H. Xie in the University of Hong Kong for improving the quality of this letter. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",
year = "2006",
month = jun,
day = "19",
doi = "10.1063/1.2215618",
language = "English",
volume = "88",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "25",
}