Low temperature wafer direct bonding between GaInAsP etch stop layer and Gd3Ga5O12

Hideki Yokoi; Tetsuya Mizumoto

Low temperature wafer direct bonding between GaInAsP etch stop layer and Gd₃Ga₅O₁₂

Hideki Yokoi, Tetsuya Mizumoto

研究成果: Paper › 査読

抄録

The direct bonding between GaInAsP and Gd₃Ga₅O₁₂ (GGG) is reported. All wafers were chemically treated, and contacted at room temperature. The bonded samples were subjected to various device fabrication processes such as baking, thermal annealing, wet etching and exposure to the plasma discharge, for examining the bonding durability. The bonding was achieved with the heat treatment at temperatures between 110 and 330°C. The samples bonded by the heat treatment at 110 and 220°C remained bonded against all the processes. The bonding between a terraced laser diode and GGG was also performed. The GaInAsP etched surface was bonded with GGG by heat treatment at temperatures between 110 and 220°C.

本文言語	English
ページ数	1
出版ステータス	Published - 1998 1月 1
イベント	Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 - Glasgow, Scotland 継続期間: 1998 9月 14 → 1998 9月 18

Other

Other	Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98
City	Glasgow, Scotland
Period	98/9/14 → 98/9/18

ASJC Scopus subject areas

制御およびシステム工学
電子工学および電気工学

他のファイルとリンク

引用スタイル

@conference{28cc23bb6ccb41a28d98026cc4e3f18c,

title = "Low temperature wafer direct bonding between GaInAsP etch stop layer and Gd3Ga5O12",

abstract = "The direct bonding between GaInAsP and Gd3Ga5O12 (GGG) is reported. All wafers were chemically treated, and contacted at room temperature. The bonded samples were subjected to various device fabrication processes such as baking, thermal annealing, wet etching and exposure to the plasma discharge, for examining the bonding durability. The bonding was achieved with the heat treatment at temperatures between 110 and 330°C. The samples bonded by the heat treatment at 110 and 220°C remained bonded against all the processes. The bonding between a terraced laser diode and GGG was also performed. The GaInAsP etched surface was bonded with GGG by heat treatment at temperatures between 110 and 220°C.",

author = "Hideki Yokoi and Tetsuya Mizumoto",

year = "1998",

month = jan,

day = "1",

language = "English",

note = "Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 ; Conference date: 14-09-1998 Through 18-09-1998",

}

TY - CONF

T1 - Low temperature wafer direct bonding between GaInAsP etch stop layer and Gd3Ga5O12

AU - Yokoi, Hideki

AU - Mizumoto, Tetsuya

PY - 1998/1/1

Y1 - 1998/1/1

N2 - The direct bonding between GaInAsP and Gd3Ga5O12 (GGG) is reported. All wafers were chemically treated, and contacted at room temperature. The bonded samples were subjected to various device fabrication processes such as baking, thermal annealing, wet etching and exposure to the plasma discharge, for examining the bonding durability. The bonding was achieved with the heat treatment at temperatures between 110 and 330°C. The samples bonded by the heat treatment at 110 and 220°C remained bonded against all the processes. The bonding between a terraced laser diode and GGG was also performed. The GaInAsP etched surface was bonded with GGG by heat treatment at temperatures between 110 and 220°C.

AB - The direct bonding between GaInAsP and Gd3Ga5O12 (GGG) is reported. All wafers were chemically treated, and contacted at room temperature. The bonded samples were subjected to various device fabrication processes such as baking, thermal annealing, wet etching and exposure to the plasma discharge, for examining the bonding durability. The bonding was achieved with the heat treatment at temperatures between 110 and 330°C. The samples bonded by the heat treatment at 110 and 220°C remained bonded against all the processes. The bonding between a terraced laser diode and GGG was also performed. The GaInAsP etched surface was bonded with GGG by heat treatment at temperatures between 110 and 220°C.

UR - http://www.scopus.com/inward/record.url?scp=0031631418&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031631418&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0031631418

T2 - Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98

Y2 - 14 September 1998 through 18 September 1998

ER -