TY - JOUR
T1 - Manipulating the Solubility of SnSe in SnTe by Br Doping for Improving the Thermoelectric Performance
AU - Zhang, Zhongwei
AU - Xu, Wenjing
AU - Liu, Chengyan
AU - Li, Fucong
AU - Yang, Hengquan
AU - Wang, Xiaoyang
AU - Gao, Jie
AU - Chen, Chen
AU - Zhang, Qian
AU - Liu, Jing
AU - Bai, Xiaobo
AU - Peng, Ying
AU - Miao, Lei
N1 - Funding Information:
The authors appreciate the financial support provided by the National Natural Science Foundation of China (Grant Nos. 51801040, 51961011, 51772056, and 52003062), the Guangxi Natural Science Foundation of China (Grant Nos. 2020GXNSFAA159111, AD20159006, 2019GXNSFAA245039 2019GXNSFAA245042, 2019GXNSFBA245028, and 2021GXNSFAA075032), the Guangxi Science and Technology Project (Grant No. AD19110072), and the Innovation Project of GUET Graduate Education (2020YCXS109).
Publisher Copyright:
© 2021 American Chemical Society.
PY - 2021/11/22
Y1 - 2021/11/22
N2 - As a potential thermoelectric (TE) candidate with a rock salt structure similar to PbTe, SnTe has attracted much attention in recent years. However, a high carrier concentration caused by its inherent Sn vacancy severely lowers the TE performance. In this study, it is found that the introduction of Br on the basis of Se doping not only manipulates the carrier concentration but also reduces the solubility of SnSe in SnTe to form SnSe nanoprecipitates with suitable sizes (<10 nm) to scatter phonons. Thereby, the power factor is improved (∼1943 μW m-1 K-2) and the thermal conductivity is reduced (∼2.13 W m-1 K-1), pushing the zT value up to ∼0.75 (Sn1.03Se0.12Te0.870Br0.010) at 823 K. This study combines the carrier and chemical solubility engineering by halogen doping and provides an approach to improve the TE performance of materials with similar structures.
AB - As a potential thermoelectric (TE) candidate with a rock salt structure similar to PbTe, SnTe has attracted much attention in recent years. However, a high carrier concentration caused by its inherent Sn vacancy severely lowers the TE performance. In this study, it is found that the introduction of Br on the basis of Se doping not only manipulates the carrier concentration but also reduces the solubility of SnSe in SnTe to form SnSe nanoprecipitates with suitable sizes (<10 nm) to scatter phonons. Thereby, the power factor is improved (∼1943 μW m-1 K-2) and the thermal conductivity is reduced (∼2.13 W m-1 K-1), pushing the zT value up to ∼0.75 (Sn1.03Se0.12Te0.870Br0.010) at 823 K. This study combines the carrier and chemical solubility engineering by halogen doping and provides an approach to improve the TE performance of materials with similar structures.
KW - Br doping
KW - SnSe nanoprecipitate
KW - SnTe
KW - thermal conductivity
KW - thermoelectric performance
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U2 - 10.1021/acsaem.1c02442
DO - 10.1021/acsaem.1c02442
M3 - Article
AN - SCOPUS:85118925674
SN - 2574-0962
VL - 4
SP - 13027
EP - 13035
JO - ACS Applied Energy Materials
JF - ACS Applied Energy Materials
IS - 11
ER -