Maskless lateral epitaxial over growth of GaN films on in situ etched sapphire substrates by metalorganic chemical vapor deposition

Engineering & Materials Science

• Metallorganic chemical vapor deposition 100%
• Sapphire 84%
• Substrates 44%
• Edge dislocations 21%
• Gallium 18%
• Nucleation 13%
• Transmission electron microscopy 13%
• Scanning electron microscopy 10%
• Decomposition 9%
• Microstructure 8%
• Experiments 4%

Physics & Astronomy

• metalorganic chemical vapor deposition 60%
• sapphire 53%
• edge dislocations 14%
• gallium 13%
• reactors 9%
• decomposition 9%
• nucleation 9%
• transmission electron microscopy 8%
• scanning electron microscopy 8%
• microstructure 7%

Chemical Compounds

• Chemical Vapour Deposition 57%
• Liquid Film 30%
• Edge Dislocation 21%
• Nucleation 10%
• Microstructure 8%
• Transmission Electron Microscopy 8%
• Scanning Electron Microscopy 7%
• Purity 6%