TY - JOUR
T1 - Mechanical and field emission properties of CGed Si(C,N) films synthesized by PECVD from HMDS precursor
AU - Li, Y. S.
AU - Kiyono, H.
AU - Shimada, S.
AU - Lu, X.
AU - Hirose, A.
N1 - Funding Information:
Y. Li is very grateful to Japan Society for the Promotion of Science (JSPS) for a fellowship.
PY - 2006/10
Y1 - 2006/10
N2 - Compositionally graded (CGed) Si(C,N) films were prepared by Ar/H2/N2 plasma enhanced chemical vapor deposition from liquid injected hexamethyldisiloxane precursor. The films were characterized by scanning/transmission electron microscopy (SEM/TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Monolithic crystalline SiC and amorphous SiNx films were produced from Ar/H2 and Ar/H2/N2 thermal plasma, respectively. The CGed SiC-SiNx film was obtained by changing N2 flow rate from 2 L/min to zero in Ar/H2/N2 during the deposition process, and it was composed of an uppermost crystalline SiC layer, a thin intermediate layer containing nanocomposite c-SiC/a-SiNx and an innermost layer of amorphous SiNx. The CGed SiNx-SiC film, in which SiNx acts as a top layer with a SiC layer underneath, was fabricated by an inverse change of the plasma gas supply from initial Ar/H2 to Ar/H2/N2. Microhardness increase and promising field emission properties were obtained from these CGed films in comparison with monolithic SiC and SiNx films.
AB - Compositionally graded (CGed) Si(C,N) films were prepared by Ar/H2/N2 plasma enhanced chemical vapor deposition from liquid injected hexamethyldisiloxane precursor. The films were characterized by scanning/transmission electron microscopy (SEM/TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Monolithic crystalline SiC and amorphous SiNx films were produced from Ar/H2 and Ar/H2/N2 thermal plasma, respectively. The CGed SiC-SiNx film was obtained by changing N2 flow rate from 2 L/min to zero in Ar/H2/N2 during the deposition process, and it was composed of an uppermost crystalline SiC layer, a thin intermediate layer containing nanocomposite c-SiC/a-SiNx and an innermost layer of amorphous SiNx. The CGed SiNx-SiC film, in which SiNx acts as a top layer with a SiC layer underneath, was fabricated by an inverse change of the plasma gas supply from initial Ar/H2 to Ar/H2/N2. Microhardness increase and promising field emission properties were obtained from these CGed films in comparison with monolithic SiC and SiNx films.
KW - Field emission
KW - Liquid alkoxide precursor
KW - Plasma CVD
KW - SiCN film
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U2 - 10.1016/j.diamond.2006.03.003
DO - 10.1016/j.diamond.2006.03.003
M3 - Article
AN - SCOPUS:33748807801
SN - 0925-9635
VL - 15
SP - 1727
EP - 1731
JO - Diamond and Related Materials
JF - Diamond and Related Materials
IS - 10
ER -