Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode

T. Nabatame; M. Kimura; H. Yamada; A. Ohi; T. Ohishi; T. Chikyow

doi:10.1149/1.3700871

Mechanism of Vfb shift in HfO₂ gate stack by Al diffusion from (TaC)_1-xAl_x gate electrode

T. Nabatame, M. Kimura, H. Yamada, A. Ohi, T. Ohishi, T. Chikyow

研究成果: Conference contribution

抄録

We investigate Vfb behavior of (TaC)_1-xAl_x gated HfO₂ MOS capacitors as a function of post metal annealing (PMA) temperature. The positive Vfb shift appears in PMA temperature at above 700°C, while the negative Vfb shift occurs at below 600°C. At below 600°C, the effective work function (φ_m,eff) of gate electrode becomes lower by increasing Al atoms with a low work function. We found that the positive Vfb shift occurs dominantly due to the φ_m,eff change induced by Al diffusion from gate electrode at 700 and 800°C. At above 900°C, Al atoms reach to the HfO₂/SiO₂ interface and form the AlO_x layers, and results in positive Vfb shift due to the bottom interface dipole. We can divide into two components of φ_m,eff change of gate electrode and the bottom interface dipole due to AlO_x layer as a function of PMA temperature.

本文言語	English
ホスト出版物のタイトル	Dielectrics for Nanosystems 5
ホスト出版物のサブタイトル	Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
出版社	Electrochemical Society Inc.
ページ	49-59
ページ数	11
版	3
ISBN（電子版）	9781607683131
ISBN（印刷版）	9781566779555
DOI	https://doi.org/10.1149/1.3700871
出版ステータス	Published - 2012
イベント	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States 継続期間: 2012 5月 6 → 2012 5月 10

出版物シリーズ

名前	ECS Transactions
番号	3
巻	45
ISSN（印刷版）	1938-5862
ISSN（電子版）	1938-6737

Conference

Conference	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
国/地域	United States
City	Seattle, WA
Period	12/5/6 → 12/5/10

ASJC Scopus subject areas

工学（全般）

文献へのアクセス

10.1149/1.3700871

他のファイルとリンク

引用スタイル

Nabatame, T., Kimura, M., Yamada, H., Ohi, A., Ohishi, T., & Chikyow, T. (2012). Mechanism of Vfb shift in HfO₂ gate stack by Al diffusion from (TaC)_1-xAl_x gate electrode. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices (3 ed., pp. 49-59). (ECS Transactions; Vol. 45, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/1.3700871

Mechanism of Vfb shift in HfO₂ gate stack by Al diffusion from (TaC)_1-xAl_x gate electrode. / Nabatame, T.; Kimura, M.; Yamada, H. その他.
Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3. ed. Electrochemical Society Inc., 2012. p. 49-59 (ECS Transactions; Vol. 45, No. 3).

研究成果: Conference contribution

Nabatame, T, Kimura, M, Yamada, H, Ohi, A, Ohishi, T & Chikyow, T 2012, Mechanism of Vfb shift in HfO₂ gate stack by Al diffusion from (TaC)_1-xAl_x gate electrode. in Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 edn, ECS Transactions, no. 3, vol. 45, Electrochemical Society Inc., pp. 49-59, 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting, Seattle, WA, United States, 12/5/6. https://doi.org/10.1149/1.3700871

Nabatame T, Kimura M, Yamada H, Ohi A, Ohishi T, Chikyow T. Mechanism of Vfb shift in HfO₂ gate stack by Al diffusion from (TaC)_1-xAl_x gate electrode. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 ed. Electrochemical Society Inc. 2012. p. 49-59. (ECS Transactions; 3). doi: 10.1149/1.3700871

Nabatame, T. ; Kimura, M. ; Yamada, H. その他. / Mechanism of Vfb shift in HfO₂ gate stack by Al diffusion from (TaC)_1-xAl_x gate electrode. Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3. ed. Electrochemical Society Inc., 2012. pp. 49-59 (ECS Transactions; 3).

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abstract = "We investigate Vfb behavior of (TaC)1-xAlx gated HfO2 MOS capacitors as a function of post metal annealing (PMA) temperature. The positive Vfb shift appears in PMA temperature at above 700°C, while the negative Vfb shift occurs at below 600°C. At below 600°C, the effective work function (φm,eff) of gate electrode becomes lower by increasing Al atoms with a low work function. We found that the positive Vfb shift occurs dominantly due to the φm,eff change induced by Al diffusion from gate electrode at 700 and 800°C. At above 900°C, Al atoms reach to the HfO2/SiO2 interface and form the AlOx layers, and results in positive Vfb shift due to the bottom interface dipole. We can divide into two components of φm,eff change of gate electrode and the bottom interface dipole due to AlOx layer as a function of PMA temperature.",

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AU - Kimura, M.

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AU - Ohishi, T.

AU - Chikyow, T.

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AB - We investigate Vfb behavior of (TaC)1-xAlx gated HfO2 MOS capacitors as a function of post metal annealing (PMA) temperature. The positive Vfb shift appears in PMA temperature at above 700°C, while the negative Vfb shift occurs at below 600°C. At below 600°C, the effective work function (φm,eff) of gate electrode becomes lower by increasing Al atoms with a low work function. We found that the positive Vfb shift occurs dominantly due to the φm,eff change induced by Al diffusion from gate electrode at 700 and 800°C. At above 900°C, Al atoms reach to the HfO2/SiO2 interface and form the AlOx layers, and results in positive Vfb shift due to the bottom interface dipole. We can divide into two components of φm,eff change of gate electrode and the bottom interface dipole due to AlOx layer as a function of PMA temperature.

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