This paper reports the first power application of AlGaAs/GaAs HBTs with selective regrown extrinsic base layers. The ultra-high carbon doping of the regrown extrinsic base led to an extremely low base resistance, which resulted in fmax of 143 GHz. Reliability test under both thermal and current stresses demonstrated the stability of the regrown HBT structure. A three-dimensional thermal simulator was also developed to determine the suitable pattern layout for the multi-finger structure. A common base HBT with six emitter fingers (240 μ m2) delivered RF power performances of 365 mW CW output power with 23% power added efficiency and 9.1 dB power gain at 25.2 GHz.
|ジャーナル||Technical Digest - International Electron Devices Meeting|
|出版ステータス||Published - 1994 12月 1|
|イベント||Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA|
継続期間: 1994 12月 11 → 1994 12月 14
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