Microwave/millimeter-wave power HBTs with regrown extrinsic base layers

Yasushi Amamiya; Chang Woo Kim; Norio Goto; Shin'ichi Tanaka; Naoki Furuhata; Hidenori Shimawaki; Kazuhiko Honjo

Microwave/millimeter-wave power HBTs with regrown extrinsic base layers

Yasushi Amamiya, Chang Woo Kim, Norio Goto, Shin'ichi Tanaka, Naoki Furuhata, Hidenori Shimawaki, Kazuhiko Honjo

研究成果: Conference article › 査読

抄録

This paper reports the first power application of AlGaAs/GaAs HBTs with selective regrown extrinsic base layers. The ultra-high carbon doping of the regrown extrinsic base led to an extremely low base resistance, which resulted in f_max of 143 GHz. Reliability test under both thermal and current stresses demonstrated the stability of the regrown HBT structure. A three-dimensional thermal simulator was also developed to determine the suitable pattern layout for the multi-finger structure. A common base HBT with six emitter fingers (240 μ m²) delivered RF power performances of 365 mW CW output power with 23% power added efficiency and 9.1 dB power gain at 25.2 GHz.

本文言語	English
ページ（範囲）	199-202
ページ数	4
ジャーナル	Technical Digest - International Electron Devices Meeting
出版ステータス	Published - 1994
イベント	Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA 継続期間: 1994 12月 11 → 1994 12月 14

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

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title = "Microwave/millimeter-wave power HBTs with regrown extrinsic base layers",

abstract = "This paper reports the first power application of AlGaAs/GaAs HBTs with selective regrown extrinsic base layers. The ultra-high carbon doping of the regrown extrinsic base led to an extremely low base resistance, which resulted in fmax of 143 GHz. Reliability test under both thermal and current stresses demonstrated the stability of the regrown HBT structure. A three-dimensional thermal simulator was also developed to determine the suitable pattern layout for the multi-finger structure. A common base HBT with six emitter fingers (240 μ m2) delivered RF power performances of 365 mW CW output power with 23% power added efficiency and 9.1 dB power gain at 25.2 GHz.",

author = "Yasushi Amamiya and Kim, {Chang Woo} and Norio Goto and Shin'ichi Tanaka and Naoki Furuhata and Hidenori Shimawaki and Kazuhiko Honjo",

year = "1994",

language = "English",

pages = "199--202",

journal = "Technical Digest - International Electron Devices Meeting",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1994 IEEE International Electron Devices Meeting ; Conference date: 11-12-1994 Through 14-12-1994",

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T1 - Microwave/millimeter-wave power HBTs with regrown extrinsic base layers

AU - Amamiya, Yasushi

AU - Kim, Chang Woo

AU - Goto, Norio

AU - Tanaka, Shin'ichi

AU - Furuhata, Naoki

AU - Shimawaki, Hidenori

AU - Honjo, Kazuhiko

PY - 1994

Y1 - 1994

N2 - This paper reports the first power application of AlGaAs/GaAs HBTs with selective regrown extrinsic base layers. The ultra-high carbon doping of the regrown extrinsic base led to an extremely low base resistance, which resulted in fmax of 143 GHz. Reliability test under both thermal and current stresses demonstrated the stability of the regrown HBT structure. A three-dimensional thermal simulator was also developed to determine the suitable pattern layout for the multi-finger structure. A common base HBT with six emitter fingers (240 μ m2) delivered RF power performances of 365 mW CW output power with 23% power added efficiency and 9.1 dB power gain at 25.2 GHz.

AB - This paper reports the first power application of AlGaAs/GaAs HBTs with selective regrown extrinsic base layers. The ultra-high carbon doping of the regrown extrinsic base led to an extremely low base resistance, which resulted in fmax of 143 GHz. Reliability test under both thermal and current stresses demonstrated the stability of the regrown HBT structure. A three-dimensional thermal simulator was also developed to determine the suitable pattern layout for the multi-finger structure. A common base HBT with six emitter fingers (240 μ m2) delivered RF power performances of 365 mW CW output power with 23% power added efficiency and 9.1 dB power gain at 25.2 GHz.

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M3 - Conference article

AN - SCOPUS:0028747954

SN - 0163-1918

SP - 199

EP - 202

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1994 IEEE International Electron Devices Meeting

Y2 - 11 December 1994 through 14 December 1994

ER -

Microwave/millimeter-wave power HBTs with regrown extrinsic base layers

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