Microwave/millimeter-wave power HBTs with regrown extrinsic base layers

Yasushi Amamiya, Chang Woo Kim, Norio Goto, Shin'ichi Tanaka, Naoki Furuhata, Hidenori Shimawaki, Kazuhiko Honjo

研究成果: Conference article査読

1 被引用数 (Scopus)


This paper reports the first power application of AlGaAs/GaAs HBTs with selective regrown extrinsic base layers. The ultra-high carbon doping of the regrown extrinsic base led to an extremely low base resistance, which resulted in fmax of 143 GHz. Reliability test under both thermal and current stresses demonstrated the stability of the regrown HBT structure. A three-dimensional thermal simulator was also developed to determine the suitable pattern layout for the multi-finger structure. A common base HBT with six emitter fingers (240 μ m2) delivered RF power performances of 365 mW CW output power with 23% power added efficiency and 9.1 dB power gain at 25.2 GHz.

ジャーナルTechnical Digest - International Electron Devices Meeting
出版ステータスPublished - 1994 12月 1
イベントProceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA
継続期間: 1994 12月 111994 12月 14

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学


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