MOVPE Growth and Characterization of High-Al-Content AlxGa1-xN/GaN Heterostructures for High-Power HEMTs on 100-mm-Diameter Sapphire Substrates

M. Miyoshi; M. Sakai; S. Arulkumaran; H. Ishikawa; T. Egawa; T. Jimbo; M. Tanaka; O. Oda

MOVPE Growth and Characterization of High-Al-Content AlxGa1-xN/GaN Heterostructures for High-Power HEMTs on 100-mm-Diameter Sapphire Substrates

M. Miyoshi, M. Sakai, S. Arulkumaran, H. Ishikawa, T. Egawa, T. Jimbo, M. Tanaka, O. Oda

機能制御システム専攻

研究成果: Article › 査読

本文言語	English
ジャーナル	Default journal
出版ステータス	Published - 2004 5月 1

引用スタイル

@article{9262370f058d4fdab11be1ef9045b431,

title = "MOVPE Growth and Characterization of High-Al-Content AlxGa1-xN/GaN Heterostructures for High-Power HEMTs on 100-mm-Diameter Sapphire Substrates",

author = "M. Miyoshi and M. Sakai and S. Arulkumaran and H. Ishikawa and T. Egawa and T. Jimbo and M. Tanaka and O. Oda",

year = "2004",

month = may,

day = "1",

language = "English",

journal = "Default journal",

}

TY - JOUR

T1 - MOVPE Growth and Characterization of High-Al-Content AlxGa1-xN/GaN Heterostructures for High-Power HEMTs on 100-mm-Diameter Sapphire Substrates

AU - Miyoshi, M.

AU - Sakai, M.

AU - Arulkumaran, S.

AU - Ishikawa, H.

AU - Egawa, T.

AU - Jimbo, T.

AU - Tanaka, M.

AU - Oda, O.

PY - 2004/5/1

Y1 - 2004/5/1

M3 - Article

JO - Default journal

JF - Default journal

ER -