New methodology for microwave/millimeter-wave MMIC development

Kenji Kamogawa; Kenjiro Nishikawa; Ichihiko Toyoda; Masami Tokumitsu; Makoto Hirano; Tadao Nakagawa; Masahiro Muraguchi

New methodology for microwave/millimeter-wave MMIC development

Kenji Kamogawa, Kenjiro Nishikawa, Ichihiko Toyoda, Masami Tokumitsu, Makoto Hirano, Tadao Nakagawa, Masahiro Muraguchi

研究成果: Conference article › 査読

抄録

A new MMIC development methodology that combines suitable devices with the 3D/multilayer interconnection process is presented. This approach allows the designer to choose the process so as to realize high performance and low cost. The integration of 0.15-μm pHEMT and 3D interconnection technologies is demonstrated. The slight changes of FET parameter with polyimide layer use can be easily incorporated into MMIC design and development.

本文言語	English
ページ（範囲）	1913-1916
ページ数	4
ジャーナル	IEEE MTT-S International Microwave Symposium Digest
巻	3
出版ステータス	Published - 2000 12月 11
イベント	Proceedings of the 1999 IEEE MTT-S International Microwave Symposium - Boston, MA, USA 継続期間: 2000 6月 11 → 2000 6月 16

ASJC Scopus subject areas

放射線
凝縮系物理学
電子工学および電気工学

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引用スタイル

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abstract = "A new MMIC development methodology that combines suitable devices with the 3D/multilayer interconnection process is presented. This approach allows the designer to choose the process so as to realize high performance and low cost. The integration of 0.15-μm pHEMT and 3D interconnection technologies is demonstrated. The slight changes of FET parameter with polyimide layer use can be easily incorporated into MMIC design and development.",

author = "Kenji Kamogawa and Kenjiro Nishikawa and Ichihiko Toyoda and Masami Tokumitsu and Makoto Hirano and Tadao Nakagawa and Masahiro Muraguchi",

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T1 - New methodology for microwave/millimeter-wave MMIC development

AU - Kamogawa, Kenji

AU - Nishikawa, Kenjiro

AU - Toyoda, Ichihiko

AU - Tokumitsu, Masami

AU - Hirano, Makoto

AU - Nakagawa, Tadao

AU - Muraguchi, Masahiro

PY - 2000/12/11

Y1 - 2000/12/11

N2 - A new MMIC development methodology that combines suitable devices with the 3D/multilayer interconnection process is presented. This approach allows the designer to choose the process so as to realize high performance and low cost. The integration of 0.15-μm pHEMT and 3D interconnection technologies is demonstrated. The slight changes of FET parameter with polyimide layer use can be easily incorporated into MMIC design and development.

AB - A new MMIC development methodology that combines suitable devices with the 3D/multilayer interconnection process is presented. This approach allows the designer to choose the process so as to realize high performance and low cost. The integration of 0.15-μm pHEMT and 3D interconnection technologies is demonstrated. The slight changes of FET parameter with polyimide layer use can be easily incorporated into MMIC design and development.

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M3 - Conference article

AN - SCOPUS:0033724439

SN - 0149-645X

VL - 3

SP - 1913

EP - 1916

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - Proceedings of the 1999 IEEE MTT-S International Microwave Symposium

Y2 - 11 June 2000 through 16 June 2000

ER -

New methodology for microwave/millimeter-wave MMIC development

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