Numerical simulation of trapping effects on DRAIN-CURRENT transients of gaas mesfets

K. Horio

doi:10.1049/el:19920182

Numerical simulation of trapping effects on DRAIN-CURRENT transients of gaas mesfets

K. Horio

研究成果: Article › 査読

抄録

Drain-current transients of GaAs MESFETs are simulated in the range from 10^-13 to 10²s. The currents become constant temporarily at around 10^-11 ('quasisteady state'), but decrease or increase after some periods, reaching real steadystate values. The slow transients are attributed to trapping and detrapping by deep levels.

本文言語	English
ページ（範囲）	295-296
ページ数	2
ジャーナル	Electronics Letters
巻	28
号	3
DOI	https://doi.org/10.1049/el:19920182
出版ステータス	Published - 1992 1月

ASJC Scopus subject areas

電子工学および電気工学

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10.1049/el:19920182

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abstract = "Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102s. The currents become constant temporarily at around 10-11 ('quasisteady state'), but decrease or increase after some periods, reaching real steadystate values. The slow transients are attributed to trapping and detrapping by deep levels.",

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author = "K. Horio",

year = "1992",

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AB - Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102s. The currents become constant temporarily at around 10-11 ('quasisteady state'), but decrease or increase after some periods, reaching real steadystate values. The slow transients are attributed to trapping and detrapping by deep levels.

KW - Field-effect transistors

KW - Semiconductor devices and materials

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Numerical simulation of trapping effects on DRAIN-CURRENT transients of gaas mesfets

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