抄録
Persistent spectral hole burning (PSHB) has been observed at 110 K in (Formula presented) exchanged (Formula presented) β″-alumina crystals. This is the highest burning temperature for PSHB in (Formula presented) doped materials. It is found that the long lived holes at high temperature are caused by light-induced local motion of ions surrounding the (Formula presented) ions. The results both of hole relaxation and temperature cycling measurements can be well interpreted by a hopping model with a Gaussian distributed barrier height.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 8283-8286 |
| ページ数 | 4 |
| ジャーナル | Physical Review B - Condensed Matter and Materials Physics |
| 巻 | 53 |
| 号 | 13 |
| DOI | |
| 出版ステータス | Published - 1996 1月 1 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学