Persistent spectral hole burning (PSHB) has been observed at 110 K in (Formula presented) exchanged (Formula presented) β″-alumina crystals. This is the highest burning temperature for PSHB in (Formula presented) doped materials. It is found that the long lived holes at high temperature are caused by light-induced local motion of ions surrounding the (Formula presented) ions. The results both of hole relaxation and temperature cycling measurements can be well interpreted by a hopping model with a Gaussian distributed barrier height.
|ジャーナル||Physical Review B - Condensed Matter and Materials Physics|
|出版ステータス||Published - 1996 1月 1|
ASJC Scopus subject areas