抄録
A simple one-speed solution to the Boltzmann equation is used to evaluate the mobility and diffusion coefficient for carriers in forward-biased semiconductor barriers. The analysis shows that although the average kinetic energy of carriers remains near thermal equilibrium, the mobility and diffusion coefficient are strongly reduced by the built-in field. Conventional macroscopic transport equations, which treat the carrier mobility and diffusion coefficient as single valued functions of the kinetic energy will improperly treat transport in forward-biased barriers. The results are important for the careful analysis of metal-semiconductor and heterojunction diodes.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 962 |
| ページ数 | 1 |
| ジャーナル | Applied Physics Letters |
| DOI | |
| 出版ステータス | Published - 1995 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（その他）