TY - JOUR
T1 - Optical and Electrical Properties of InxGa1−xSe Mixed Crystal Grown from Indium Flux by Traveling Heater Method
AU - Sato, Yohei
AU - Tang, Chao
AU - Watanabe, Katsuya
AU - Nakajima, Mayu
AU - Yamamoto, Takuya
AU - Tezuka, Nobuki
AU - Tanabe, Tadao
AU - Oyama, Yutaka
N1 - Funding Information:
This work was partially supported by JSPS Grant-in-Aid for JSPS Fellows Grant Numbers JP18J11396 and JP19J20564.
Publisher Copyright:
© 2021, The Minerals, Metals & Materials Society.
PY - 2021/5
Y1 - 2021/5
N2 - InxGa1−xSe mixed crystals have been successfully grown from an indium flux by the traveling heater method at three growth temperatures. The thickness of the grown InxGa1−xSe mixed crystal perpendicular to (001) was more than 3 mm. The lattice constant, and optical and electrical properties of the InxGa1−xSe mixed crystals and undoped GaSe crystals were investigated and compared. The indium content of the InxGa1−xSe mixed crystals was observed to increase with decreasing growth temperature, while the lattice constant along the c-axis was observed to follow Vegard’s law. It was confirmed that a bandgap of In0.020Ga0.980Se is narrower than that of undoped GaSe according to the photoluminescence (PL) spectra. Compared with undoped GaSe crystal, the carrier concentration p was decreased by the incorporation of indium (In0.020Ga0.980Se, p = 6.4 × 1014 cm−3 at 257 K; In0.037Ga0.963Se, p = 2.6 × 1014 cm−3 at 257 K). In addition, it was suggested that the dominant carrier scattering mechanism of high-indium-content crystals at low temperature is ionized impurity scattering.
AB - InxGa1−xSe mixed crystals have been successfully grown from an indium flux by the traveling heater method at three growth temperatures. The thickness of the grown InxGa1−xSe mixed crystal perpendicular to (001) was more than 3 mm. The lattice constant, and optical and electrical properties of the InxGa1−xSe mixed crystals and undoped GaSe crystals were investigated and compared. The indium content of the InxGa1−xSe mixed crystals was observed to increase with decreasing growth temperature, while the lattice constant along the c-axis was observed to follow Vegard’s law. It was confirmed that a bandgap of In0.020Ga0.980Se is narrower than that of undoped GaSe according to the photoluminescence (PL) spectra. Compared with undoped GaSe crystal, the carrier concentration p was decreased by the incorporation of indium (In0.020Ga0.980Se, p = 6.4 × 1014 cm−3 at 257 K; In0.037Ga0.963Se, p = 2.6 × 1014 cm−3 at 257 K). In addition, it was suggested that the dominant carrier scattering mechanism of high-indium-content crystals at low temperature is ionized impurity scattering.
KW - Gallium selenide
KW - Hall-effect measurements
KW - Vegard’s law
KW - solid solution
KW - traveling heater method
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U2 - 10.1007/s11664-020-08689-4
DO - 10.1007/s11664-020-08689-4
M3 - Article
AN - SCOPUS:85100889099
SN - 0361-5235
VL - 50
SP - 2649
EP - 2655
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 5
ER -