Optically induced defects in vitreous silica

S. Juodkazis, M. Watanabe, H. B. Sun, S. Matsuo, J. Nishii, H. Misawa

研究成果: Conference article査読

21 被引用数 (Scopus)

抄録

We report the observation of photoluminescence (PL) in optically damaged vitreous silica (v-SiO2) and its gradual decrease by annealing at temperature range from room temperature to 773 K. Optical damage was induced by tightly focused picosecond or femtosecond irradiation inside v-SiO2. PL bands at 280, 470 and 650 nm were observed. The PL can be excited by 250 nm irradiation, which corresponds to the absorption band of the oxygen vacancy, VO. The decrease of PL with annealing is explained by structural modifications of the defects in the damaged area.

本文言語English
ページ(範囲)696-700
ページ数5
ジャーナルApplied Surface Science
154
DOI
出版ステータスPublished - 2000 2月 1
外部発表はい
イベントThe Symposium A on Photo-Excited Processes, Diagnostics and Applications of the 1999 E-MRS Spring Conference (ICPEPA-3) - Strasbourg, France
継続期間: 1999 6月 11999 6月 4

ASJC Scopus subject areas

  • 化学一般
  • 凝縮系物理学
  • 物理学および天文学一般
  • 表面および界面
  • 表面、皮膜および薄膜

フィンガープリント

「Optically induced defects in vitreous silica」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル