Optoelectronic properties of phosphorus doped p-type ZnO films grown by dual ion beam sputtering

Physics & Astronomy

• phosphorus 100%
• sputtering 80%
• ion beams 79%
• critical point 46%
• room temperature 28%
• red shift 26%
• thin films 26%
• ellipsometry 25%
• line shape 24%
• energy 22%
• heterojunctions 22%
• diodes 19%
• oscillators 19%
• conduction 17%
• electrical resistivity 16%
• fabrication 15%
• annealing 15%
• electric potential 13%