Oxidation-Induced Damages on Germanium MIS Capacitors with HfO2 Gate Dielectrics

K. Kita, M. Sasagawa, K. Tomida, K. Kyuno, A. Toriumi

研究成果: Article › 査読

本文言語	English
ページ（範囲）	292-293
ジャーナル	Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM)
出版ステータス	Published - 2003 9月 1

引用スタイル

@article{270ccda65f694e2e8c0f7e01d1b86a98,

title = "Oxidation-Induced Damages on Germanium MIS Capacitors with HfO2 Gate Dielectrics",

author = "K. Kita and M. Sasagawa and K. Tomida and K. Kyuno and A. Toriumi",

year = "2003",

month = sep,

day = "1",

language = "English",

pages = "292--293",

journal = "Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM)",

}

TY - JOUR

T1 - Oxidation-Induced Damages on Germanium MIS Capacitors with HfO2 Gate Dielectrics

AU - Kita, K.

AU - Sasagawa, M.

AU - Tomida, K.

AU - Kyuno, K.

AU - Toriumi, A.

PY - 2003/9/1

Y1 - 2003/9/1

M3 - Article

SP - 292

EP - 293

JO - Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM)

JF - Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM)

ER -