抄録
P-channel A1GaAs/GaAs heterostructure FETs O-HFETs) employing two-dimensional hole gas (2DHG) were fabricated and their characteristics were measured at 300 and 77 K. The achieved extrinsic transconductances were respectively 16 mS-mm-1and 46 mSmm-1with a gate length of 1 μm. Calculations indicate that transconductances of more than 100 mSmm-1at 300 K and more than 200 mSmm-1at 77 K should be achievable in p-HFET devices. The above results demonstrate the possibility of employing/?-HFETs for complementary logic, workable even at room temperature.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 868-870 |
| ページ数 | 3 |
| ジャーナル | Japanese Journal of Applied Physics |
| 巻 | 23 |
| 号 | 11 |
| DOI | |
| 出版ステータス | Published - 1984 11月 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 工学（全般）
- 物理学および天文学（全般）