The effects of PH3/H2 plasma exposure on GaAs grown on Si substrate (GaAs/Si) were investigated. It found that incorporation of P atoms in H2 plasma not only hydrogenated the defect-related recombination centers of GaAs/Si epilayer, but also phosphidized the surface region of GaAs/Si epilayer by forming a phosphidized layer. Electron beam-induced current measurement directly proved that the defect-related dark spot density was effectively reduced by adding P atoms into the pure H2 plasma. In addition, PH3/H2 plasma exposure greatly increased the minority carrier lifetime properties and decreased the saturation current of the GaAs p+-n junction structure grown on Si substrate.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2001 8月|
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