Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure

G. Wang, T. Ogawa, K. Murase, K. Hori, T. Soga, B. Zhang, G. Zhao, H. Ishikawa, T. Egawa, T. Jimbo, M. Umeno

研究成果: Article › 査読