抄録
A Schottky diode of high quality Si-doped GaN grown on the c-face of a sapphire substrate by metalorganic chemical vapor deposition was investigated. Using conventional lift-off techniques, Ti/Al and Pd were evaporated as ohmic and Schottky contacts, respectively. The Pd/GaN Schottky diode showed excellent electronic properties. From the temperature dependence of current-voltage characteristics, a barrier height and a measured effective Richardson coefficient were obtained as 1.53 eV and 23.2 A · cm-2 · K-2, respectively. The barrier height was much higher than reported values and the measured Richardson coefficient was almost equal to the calculated theoretical value of 26 A · cm-2 · K-2.
| 本文言語 | English |
|---|---|
| ページ（範囲） | L7-L9 |
| ジャーナル | Japanese Journal of Applied Physics, Part 2: Letters |
| 巻 | 37 |
| 号 | 1 PART A/B |
| DOI | |
| 出版ステータス | Published - 1998 1月 15 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 工学（全般）
- 物理学および天文学（全般）