抄録
The reaction induced phase separation aimed for the distribution of nano-structured particles has been investigated by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) in ternary Ti-Si-N film via N+ implantation. The fabrication of Ti-20at%Si film has made on Si substrates by ion beam sputtering (IBS), and then N+ implantation with 50 keV has been conducted on these films. The selected area electron diffraction (SAED) from as-deposited film shows amorphous Ti-Si. As-deposited Ti-Si film exhibited high stability even for the heat treatment at 773K for 3600s. N+ implantation induced the direct formation of nano crystalline of fcc-TiNx within the Ti-Si film. The XPS depth profiling and chemical shift suggest that the preferential nitriding of Ti accompanied with the segregation of SiNx occurred during N-implantation.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 3651-3654 |
| ページ数 | 4 |
| ジャーナル | Materials Science Forum |
| 巻 | 475-479 |
| 号 | V |
| DOI | |
| 出版ステータス | Published - 2005 1月 1 |
| イベント | PRICM 5: The Fifth Pacific Rim International Conference on Advanced Materials and Processing - Beijing, China 継続期間: 2004 11月 2 → 2004 11月 5 |
ASJC Scopus subject areas
- 材料科学（全般）
- 凝縮系物理学
- 材料力学
- 機械工学