抄録
We report on the photoluminescence (PL) and lasing characteristics of GaInNAs/GaAsP strain-compensated quantum wells (QWs) as a function of the amount of strain-compensation. The PL intensity of GaInNAs/GaAs(P) QWs was increased by increasing both the thickness and phosphorous (P) content of GaAsP strain-compensation layers. It was also shown that strain compensation is beneficial for increasing of the number of GaInNAs QWs. The threshold current densities of lasers were improved by introducing strain compensation.
| 本文言語 | English |
|---|---|
| ページ（範囲） | L267-L270 |
| ジャーナル | Japanese Journal of Applied Physics, Part 2: Letters |
| 巻 | 43 |
| 号 | 2 B |
| DOI | |
| 出版ステータス | Published - 2004 2月 15 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 工学（全般）
- 物理学および天文学（全般）