TY - JOUR
T1 - Photoluminescence study on point defects in SIMOX buried SiO2 film
AU - Seol, K. S.
AU - Ieki, A.
AU - Ohki, Y.
AU - Nishikawa, H.
AU - Tachimori, M.
PY - 1995/12/1
Y1 - 1995/12/1
N2 - Defects in buried SiO2 films in Si formed by implantation of oxygen ions (SIMOX) were characterized by photoluminescence (PL) excited by KrF excimer laser (5.0 eV) and synchrotron radiation. Two PL bands were observed at 4.3 eV and 2.7 eV. The 4.3 eV band has two PL excitation bands at 5.0 eV and 7.4 eV, and its decay time is 4.0 ns for the 5.0 eV excitation and 2.4 ns for the 7.4 eV excitation. The decay time of the 2.7 eV PL band is found to be 9.7 ms. These results are very similar to those for the 4.3 eV and the 2.7 eV PL bands, which are observed in bulk silica glass of an oxygen-deficient type and attributed to the oxygen vacancy.
AB - Defects in buried SiO2 films in Si formed by implantation of oxygen ions (SIMOX) were characterized by photoluminescence (PL) excited by KrF excimer laser (5.0 eV) and synchrotron radiation. Two PL bands were observed at 4.3 eV and 2.7 eV. The 4.3 eV band has two PL excitation bands at 5.0 eV and 7.4 eV, and its decay time is 4.0 ns for the 5.0 eV excitation and 2.4 ns for the 7.4 eV excitation. The decay time of the 2.7 eV PL band is found to be 9.7 ms. These results are very similar to those for the 4.3 eV and the 2.7 eV PL bands, which are observed in bulk silica glass of an oxygen-deficient type and attributed to the oxygen vacancy.
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M3 - Conference article
AN - SCOPUS:0029516630
SN - 0255-5476
VL - 196-201
SP - 1909
EP - 1914
JO - Materials Science Forum
JF - Materials Science Forum
IS - pt 4
T2 - Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4)
Y2 - 23 July 1995 through 28 July 1995
ER -