TY - JOUR
T1 - Physical mechanism of performance instabilities such as kink phenomena and related backgating effect in GaAs MESFETs
AU - Horio, K.
AU - Usami, K.
AU - Satoh, K.
PY - 1995
Y1 - 1995
N2 - Kink phenomena in GaAs MESFETs are studied by self-consistent 2-D simulation. The kinks are explained by impact ionization of holes and the following hole trapping (or hole accumulation) in the substrate rather than by direct gate breakdown. The kink-related backgating effect is also reproduced by our simulation, which is qualitatively consistent with a recent experimental finding.
AB - Kink phenomena in GaAs MESFETs are studied by self-consistent 2-D simulation. The kinks are explained by impact ionization of holes and the following hole trapping (or hole accumulation) in the substrate rather than by direct gate breakdown. The kink-related backgating effect is also reproduced by our simulation, which is qualitatively consistent with a recent experimental finding.
UR - http://www.scopus.com/inward/record.url?scp=0029223661&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029223661&partnerID=8YFLogxK
U2 - 10.1109/relphy.1995.513681
DO - 10.1109/relphy.1995.513681
M3 - Conference article
AN - SCOPUS:0029223661
SN - 0099-9512
SP - 212
EP - 216
JO - Annual Proceedings - Reliability Physics (Symposium)
JF - Annual Proceedings - Reliability Physics (Symposium)
T2 - Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings
Y2 - 4 April 1995 through 6 April 1995
ER -