Physical mechanisms of performance instabilities such as gate-lag and kink phenomena in GaAs MESFETs

Y. Mitani; A. Wakabayashi; Kazushige Horio

doi:10.1109/RELPHY.2002.996634

Physical mechanisms of performance instabilities such as gate-lag and kink phenomena in GaAs MESFETs

Y. Mitani, A. Wakabayashi, Kazushige Horio

研究成果: Conference contribution

抄録

Slow current transients during turn-on (gate-lag) and abnormal increases in drain conductance (kink) in GaAs MESFETs are studied by two-dimensional analysis including surface states and impact ionization of carriers. Particularly, it is discussed how the gate-lag is influenced by impact ionization of carriers and how the surface-related kink depends on the structural parameters such as gate length and distance between source and gate.

本文言語	English
ホスト出版物のタイトル	IEEE International Reliability Physics Symposium Proceedings
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	189-193
ページ数	5
巻	2002-January
ISBN（印刷版）	0780373529
DOI	https://doi.org/10.1109/RELPHY.2002.996634
出版ステータス	Published - 2002
イベント	40th Annual IEEE International Reliability Physics Symposium, IRPS 2002 - Dallas, United States 継続期間: 2002 4月 7 → 2002 4月 11

Other

Other	40th Annual IEEE International Reliability Physics Symposium, IRPS 2002
国/地域	United States
City	Dallas
Period	02/4/7 → 02/4/11

ASJC Scopus subject areas

工学（全般）

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10.1109/RELPHY.2002.996634

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引用スタイル

Mitani, Y, Wakabayashi, A & Horio, K 2002, Physical mechanisms of performance instabilities such as gate-lag and kink phenomena in GaAs MESFETs. in IEEE International Reliability Physics Symposium Proceedings. vol. 2002-January, 996634, Institute of Electrical and Electronics Engineers Inc., pp. 189-193, 40th Annual IEEE International Reliability Physics Symposium, IRPS 2002, Dallas, United States, 02/4/7. https://doi.org/10.1109/RELPHY.2002.996634

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title = "Physical mechanisms of performance instabilities such as gate-lag and kink phenomena in GaAs MESFETs",

abstract = "Slow current transients during turn-on (gate-lag) and abnormal increases in drain conductance (kink) in GaAs MESFETs are studied by two-dimensional analysis including surface states and impact ionization of carriers. Particularly, it is discussed how the gate-lag is influenced by impact ionization of carriers and how the surface-related kink depends on the structural parameters such as gate length and distance between source and gate.",

keywords = "Energy states, Gallium arsenide, HEMTs, Impact ionization, MESFETs, MODFETs, Pulse circuits, Structural engineering, Transient analysis, Voltage",

author = "Y. Mitani and A. Wakabayashi and Kazushige Horio",

year = "2002",

doi = "10.1109/RELPHY.2002.996634",

language = "English",

isbn = "0780373529",

volume = "2002-January",

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booktitle = "IEEE International Reliability Physics Symposium Proceedings",

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AU - Horio, Kazushige

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Y1 - 2002

N2 - Slow current transients during turn-on (gate-lag) and abnormal increases in drain conductance (kink) in GaAs MESFETs are studied by two-dimensional analysis including surface states and impact ionization of carriers. Particularly, it is discussed how the gate-lag is influenced by impact ionization of carriers and how the surface-related kink depends on the structural parameters such as gate length and distance between source and gate.

AB - Slow current transients during turn-on (gate-lag) and abnormal increases in drain conductance (kink) in GaAs MESFETs are studied by two-dimensional analysis including surface states and impact ionization of carriers. Particularly, it is discussed how the gate-lag is influenced by impact ionization of carriers and how the surface-related kink depends on the structural parameters such as gate length and distance between source and gate.

KW - Energy states

KW - Gallium arsenide

KW - HEMTs

KW - Impact ionization

KW - MESFETs

KW - MODFETs

KW - Pulse circuits

KW - Structural engineering

KW - Transient analysis

KW - Voltage

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DO - 10.1109/RELPHY.2002.996634

M3 - Conference contribution

AN - SCOPUS:84949208209

SN - 0780373529

VL - 2002-January

SP - 189

EP - 193

BT - IEEE International Reliability Physics Symposium Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 40th Annual IEEE International Reliability Physics Symposium, IRPS 2002

Y2 - 7 April 2002 through 11 April 2002

ER -

Physical mechanisms of performance instabilities such as gate-lag and kink phenomena in GaAs MESFETs

抄録

Other

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