Physical properties of bi₄ti₃o₁₂films grown on si(100) wafers

Physics & Astronomy

• physical properties 87%
• wafers 83%
• permittivity 51%
• titanates 43%
• ferroelectricity 42%
• bismuth 36%
• magnetron sputtering 31%
• film thickness 30%
• dissipation 30%
• breakdown 28%
• ceramics 24%
• temperature 11%

Engineering & Materials Science

• Physical properties 100%
• Permittivity 74%
• Ferroelectricity 70%
• Bismuth 49%
• Magnetron sputtering 49%
• Electric breakdown 41%
• Film thickness 40%
• Substrates 26%
• Temperature 14%