Bismuth titanate (Bi4Ti3O12) thin films were fabricated on (100)-oriented silicon substrates with bismuth silicate (Bi2SiO5) buffer layer by metal organic decomposition (MOD) method. It was confirmed that the resultant films were single-phase Bi4Ti3O12 with c-axis dominant orientation. Thickness of Bi4Ti3O12 and Bi2SiO5 layer were approximately 50 nm and 5 nm, respectively. The fabricated metal-ferroelectric-insulator-semiconductor (MFIS) structures, have relatively superior leakage current density of approximately 10-9 A cm-2 and high break-down applied voltage of approximately 10 V. From the above result, it is confirmed that the crystallinity and surface morphology of Bi4Ti3O12 thin films are greatly dependent on the existence of a Bi4SiO5 layer. Therefore, we consider that the Bi4Ti3O12 thin film characteristics may be improved by Bi2SiO5 buffer layer.
|出版ステータス||Published - 2002|
|イベント||Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics - Nara, Japan|
継続期間: 2002 5月 28 → 2002 6月 1
|Conference||Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics|
|Period||02/5/28 → 02/6/1|
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