Post-Deposition Annealing Effects on Interface States Generation in HfO2/SiO2/Si MOS Capacitors

M. Sasagawa, K. Kita, K. Kyuno, A. Toriumi

研究成果: Article › 査読

本文言語	English
ページ（範囲）	534-535
ジャーナル	Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)
出版ステータス	Published - 2004 9月 1

引用スタイル

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title = "Post-Deposition Annealing Effects on Interface States Generation in HfO2/SiO2/Si MOS Capacitors",

author = "M. Sasagawa and K. Kita and K. Kyuno and A. Toriumi",

year = "2004",

month = sep,

day = "1",

language = "English",

pages = "534--535",

journal = "Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)",

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T1 - Post-Deposition Annealing Effects on Interface States Generation in HfO2/SiO2/Si MOS Capacitors

AU - Sasagawa, M.

AU - Kita, K.

AU - Kyuno, K.

AU - Toriumi, A.

PY - 2004/9/1

Y1 - 2004/9/1

M3 - Article

SP - 534

EP - 535

JO - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

JF - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

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