Prediction and verification of no gate orientation effects for GaAs MESFETs in (111) substrates

K.Ueno K.Ueno, H.Hida H.Hida, Y.Ogawa Y.Ogawa, Y.Tsukada Y.Tsukada, T.Nozaki T.Nozaki, Kazuyoshi Ueno

研究成果: Article › 査読

引用スタイル

@article{e82bd9e2367f498a813bb185628db481,

title = "Prediction and verification of no gate orientation effects for GaAs MESFETs in (111) substrates",

author = "K.Ueno K.Ueno and H.Hida H.Hida and Y.Ogawa Y.Ogawa and Y.Tsukada Y.Tsukada and T.Nozaki T.Nozaki and Kazuyoshi Ueno",

year = "1988",

month = dec,

day = "1",

language = "English",

pages = "846--849",

journal = "1988 IEDM Technical Digest",

}

TY - JOUR

T1 - Prediction and verification of no gate orientation effects for GaAs MESFETs in (111) substrates

AU - K.Ueno, K.Ueno

AU - H.Hida, H.Hida

AU - Y.Ogawa, Y.Ogawa

AU - Y.Tsukada, Y.Tsukada

AU - T.Nozaki, T.Nozaki

AU - Ueno, Kazuyoshi

PY - 1988/12/1

Y1 - 1988/12/1

M3 - Article

SP - 846

EP - 849

JO - 1988 IEDM Technical Digest

JF - 1988 IEDM Technical Digest

ER -