TY - JOUR
T1 - Preparation of an H2-permselective silica membrane for the separation of H2 from the hydrogen iodide decomposition reaction in the iodine–sulfur process
AU - Myagmarjav, Odtsetseg
AU - Ikeda, Ayumi
AU - Tanaka, Nobuyuki
AU - Kubo, Shinji
AU - Nomura, Mikihiro
N1 - Publisher Copyright:
© 2017 Hydrogen Energy Publications LLC
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2017/3/2
Y1 - 2017/3/2
N2 - A high-performance, H2-permselective silica membrane derived from hexyltrimethoxysilane (HTMOS) was developed for application in the thermochemical water-splitting iodine–sulfur process. Silica membranes, referred to here as HTMOS membranes, were prepared via counter-diffusion chemical vapor deposition on γ-alumina-coated α-alumina support tubes with outer diameters of 10 mm. Special attention was devoted to obtain high H2/HI selectivity, high H2 permeance, and good stability in the presence of corrosive HI gas. The effects of the deposition conditions, temperature, and period were investigated. The HTMOS membrane prepared at 450 °C for 5 min exhibited high H2/HI selectivity (>175) with H2 permeance on the order of 10−7 mol Pa−1 m−2 s−1. On the basis of stability experiments, it was found that the HTMOS membrane was stable upon HI exposure at a temperature of 400 °C for 11 h.
AB - A high-performance, H2-permselective silica membrane derived from hexyltrimethoxysilane (HTMOS) was developed for application in the thermochemical water-splitting iodine–sulfur process. Silica membranes, referred to here as HTMOS membranes, were prepared via counter-diffusion chemical vapor deposition on γ-alumina-coated α-alumina support tubes with outer diameters of 10 mm. Special attention was devoted to obtain high H2/HI selectivity, high H2 permeance, and good stability in the presence of corrosive HI gas. The effects of the deposition conditions, temperature, and period were investigated. The HTMOS membrane prepared at 450 °C for 5 min exhibited high H2/HI selectivity (>175) with H2 permeance on the order of 10−7 mol Pa−1 m−2 s−1. On the basis of stability experiments, it was found that the HTMOS membrane was stable upon HI exposure at a temperature of 400 °C for 11 h.
KW - Chemical vapor deposition
KW - Hydrogen iodide decomposition
KW - Silica membrane
KW - Thermochemical hydrogen production
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U2 - 10.1016/j.ijhydene.2017.01.074
DO - 10.1016/j.ijhydene.2017.01.074
M3 - Article
AN - SCOPUS:85012011411
SN - 0360-3199
VL - 42
SP - 6012
EP - 6023
JO - International Journal of Hydrogen Energy
JF - International Journal of Hydrogen Energy
IS - 9
ER -