Preparation of highly c-axis-oriented Bi₄Ti₃O₁₂ thin films and their crystallographic, dielectric and optical properties

Engineering & Materials Science

• Optical properties 100%
• Dielectric properties 97%
• Thin films 75%
• Permittivity 60%
• Auger electron spectroscopy 31%
• Remanence 30%
• Substrates 28%
• Bismuth 26%
• Magnetron sputtering 26%
• Silicon wafers 24%
• Film thickness 21%
• Temperature 8%

Physics & Astronomy

• dielectric properties 66%
• preparation 58%
• optical properties 52%
• permittivity 41%
• thin films 41%
• titanates 23%
• Auger spectroscopy 20%
• bismuth 19%
• electron spectroscopy 19%
• magnetron sputtering 16%
• film thickness 16%
• wafers 15%
• ceramics 13%
• profiles 10%
• silicon 10%
• polarization 10%
• temperature 5%

Chemical Compounds

• Dielectric Property 80%
• Optical Property 58%
• Liquid Film 38%
• Dielectric Constant 29%
• Magnetron Sputtering 18%
• Auger Electron Spectroscopy 18%
• Ceramic 12%
• Polarization 12%