Bismuth titanate (Bi4Ti3O12) thin films have been deposited on a (100) silicon substrate with a buffer layer, using a rf planer magnetron sputtering technique. The buffer layer was formed by the heat treatment of an amorphous layer at 550°C, and exhibits a pyrochlore phase with a smooth surface. The amorphous layer consists of Bi, Ti and O atoms, which are the elements of the ferroelectric Bi4Ti3O12 thin film. Ferroelectric Bi4Ti3O12 thin films were deposited on the buffer layer at a low substrate temperature of 500°C. The Bi4Ti3O12 thin films have a dense and small grain structure. A D-E hysteresis characteristic has been observed at room temperature. The apparent remanent polarization and the apparent coercive field of this film at the measurement frequency of 50 Hz were estimated to be 2.4 μC/cm2 and 2.3 kV/cm, respectively.
|Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
|9 SUPPL. B
|Published - 1997 9月
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