Re-Examination on the Universality of Si-MOS Inversion Layer Mobility

H. Irie, K. Kita, K. Kyuno, S. Takagi, K. Takasaki, M. Kubota, S. Saito, S. Nishikawa, A. Toriumi

研究成果: Article › 査読

本文言語	English
ページ（範囲）	716-717
ジャーナル	Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM)
出版ステータス	Published - 2003 9月 1

引用スタイル

@article{77ec5aa9fcf4443699a19830289540d5,

title = "Re-Examination on the Universality of Si-MOS Inversion Layer Mobility",

author = "H. Irie and K. Kita and K. Kyuno and S. Takagi and K. Takasaki and M. Kubota and S. Saito and S. Nishikawa and A. Toriumi",

year = "2003",

month = sep,

day = "1",

language = "English",

pages = "716--717",

journal = "Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM)",

}

TY - JOUR

T1 - Re-Examination on the Universality of Si-MOS Inversion Layer Mobility

AU - Irie, H.

AU - Kita, K.

AU - Kyuno, K.

AU - Takagi, S.

AU - Takasaki, K.

AU - Kubota, M.

AU - Saito, S.

AU - Nishikawa, S.

AU - Toriumi, A.

PY - 2003/9/1

Y1 - 2003/9/1

M3 - Article

SP - 716

EP - 717

JO - Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM)

JF - Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM)

ER -