Reactive ion etch characteristics of silicon oxynitride formed plasma enhanced chemical vapor deposition

K.Ueno K.Ueno, K.Tokashiki K.Tokashiki, T.Kikkawa T.Kikkawa, Kazuyoshi Ueno

研究成果: Article › 査読

本文言語	English
ページ（範囲）	1447-1450
ジャーナル	Journal of Vacuum Science and Technology
巻	B13
出版ステータス	Published - 1995 7月 1

引用スタイル

@article{02aeebb3a81545d8a1b47ceb5e9b1a12,

title = "Reactive ion etch characteristics of silicon oxynitride formed plasma enhanced chemical vapor deposition",

author = "K.Ueno K.Ueno and K.Tokashiki K.Tokashiki and T.Kikkawa T.Kikkawa and Kazuyoshi Ueno",

year = "1995",

month = jul,

day = "1",

language = "English",

volume = "B13",

pages = "1447--1450",

journal = "Journal of Vacuum Science and Technology",

}

TY - JOUR

T1 - Reactive ion etch characteristics of silicon oxynitride formed plasma enhanced chemical vapor deposition

AU - K.Ueno, K.Ueno

AU - K.Tokashiki, K.Tokashiki

AU - T.Kikkawa, T.Kikkawa

AU - Ueno, Kazuyoshi

PY - 1995/7/1

Y1 - 1995/7/1

M3 - Article

VL - B13

SP - 1447

EP - 1450

JO - Journal of Vacuum Science and Technology

JF - Journal of Vacuum Science and Technology

ER -