Realizing high thermoelectric performance in p-type Si1-x-yGexSnythin films at ambient temperature by Sn modulation doping

Ying Peng; Huajun Lai; Chengyan Liu; Jie Gao; Masashi Kurosawa; Osamu Nakatsuka; Tsunehiro Takeuchi; Shigeaki Zaima; Sakae Tanemura; Lei Miao

doi:10.1063/5.0012087

Realizing high thermoelectric performance in p-type Si_1-x-yGe_xSn_ythin films at ambient temperature by Sn modulation doping

Ying Peng, Huajun Lai, Chengyan Liu, Jie Gao, Masashi Kurosawa, Osamu Nakatsuka, Tsunehiro Takeuchi, Shigeaki Zaima, Sakae Tanemura, Lei Miao

研究成果: Article › 査読

16 被引用数 (Scopus)

抄録

In this study, we report a power factor (PF) value as high as 1950 μW m-1 K-2 for B-ion implanted thermoelectric Si1-x-yGexSny ternary alloy films at ambient temperature by radio frequency sputtering followed by a short-term rapid thermal annealing heat treatment. The record high PF value was realized by modulation doping of Sn in the Si1-x-yGexSny film. It was found that using metallic Sn as nanoparticles and Si1-x-yGexSny as the matrix leads to a large enhancement of the carrier concentration and a very small decrease in carrier mobility. As a result, the electrical conductivity and power factor of the modulation doped Si1-x-yGexSny alloy were greatly improved. The findings of this study present emerging opportunities for the modulation of Si integration thermoelectrics as wearable devices charged by body temperature.

本文言語	English
論文番号	053903
ジャーナル	Applied Physics Letters
巻	117
号	5
DOI	https://doi.org/10.1063/5.0012087
出版ステータス	Published - 2020 8月 3
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

文献へのアクセス

10.1063/5.0012087

他のファイルとリンク

引用スタイル

@article{2665353573a6420bb6d7a66c81f83bb3,

title = "Realizing high thermoelectric performance in p-type Si1-x-yGexSnythin films at ambient temperature by Sn modulation doping",

abstract = "In this study, we report a power factor (PF) value as high as 1950 μW m-1 K-2 for B-ion implanted thermoelectric Si1-x-yGexSny ternary alloy films at ambient temperature by radio frequency sputtering followed by a short-term rapid thermal annealing heat treatment. The record high PF value was realized by modulation doping of Sn in the Si1-x-yGexSny film. It was found that using metallic Sn as nanoparticles and Si1-x-yGexSny as the matrix leads to a large enhancement of the carrier concentration and a very small decrease in carrier mobility. As a result, the electrical conductivity and power factor of the modulation doped Si1-x-yGexSny alloy were greatly improved. The findings of this study present emerging opportunities for the modulation of Si integration thermoelectrics as wearable devices charged by body temperature.",

author = "Ying Peng and Huajun Lai and Chengyan Liu and Jie Gao and Masashi Kurosawa and Osamu Nakatsuka and Tsunehiro Takeuchi and Shigeaki Zaima and Sakae Tanemura and Lei Miao",

note = "Funding Information: This work was partly supported by PRESTO (Grant No. JPMJPR15R2) and CREST (Grant No. JPMJCR19Q5) from the JST in Japan, a research grant (Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development) from the MEXT in Japan, the National Natural Science Foundation of China (Grant Nos. 51772056, 51961011, and 51801040), the Guangxi Natural Science Foundation of China (Grant No. 2019GXNSFAA245039), and the Open Foundation of Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University (Grant No. 2020GXYSOF11). Publisher Copyright: {\textcopyright} 2020 Author(s).",

year = "2020",

month = aug,

day = "3",

doi = "10.1063/5.0012087",

language = "English",

volume = "117",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Realizing high thermoelectric performance in p-type Si1-x-yGexSnythin films at ambient temperature by Sn modulation doping

AU - Peng, Ying

AU - Lai, Huajun

AU - Liu, Chengyan

AU - Gao, Jie

AU - Kurosawa, Masashi

AU - Nakatsuka, Osamu

AU - Takeuchi, Tsunehiro

AU - Zaima, Shigeaki

AU - Tanemura, Sakae

AU - Miao, Lei

N1 - Funding Information: This work was partly supported by PRESTO (Grant No. JPMJPR15R2) and CREST (Grant No. JPMJCR19Q5) from the JST in Japan, a research grant (Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development) from the MEXT in Japan, the National Natural Science Foundation of China (Grant Nos. 51772056, 51961011, and 51801040), the Guangxi Natural Science Foundation of China (Grant No. 2019GXNSFAA245039), and the Open Foundation of Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University (Grant No. 2020GXYSOF11). Publisher Copyright: © 2020 Author(s).

PY - 2020/8/3

Y1 - 2020/8/3

N2 - In this study, we report a power factor (PF) value as high as 1950 μW m-1 K-2 for B-ion implanted thermoelectric Si1-x-yGexSny ternary alloy films at ambient temperature by radio frequency sputtering followed by a short-term rapid thermal annealing heat treatment. The record high PF value was realized by modulation doping of Sn in the Si1-x-yGexSny film. It was found that using metallic Sn as nanoparticles and Si1-x-yGexSny as the matrix leads to a large enhancement of the carrier concentration and a very small decrease in carrier mobility. As a result, the electrical conductivity and power factor of the modulation doped Si1-x-yGexSny alloy were greatly improved. The findings of this study present emerging opportunities for the modulation of Si integration thermoelectrics as wearable devices charged by body temperature.

AB - In this study, we report a power factor (PF) value as high as 1950 μW m-1 K-2 for B-ion implanted thermoelectric Si1-x-yGexSny ternary alloy films at ambient temperature by radio frequency sputtering followed by a short-term rapid thermal annealing heat treatment. The record high PF value was realized by modulation doping of Sn in the Si1-x-yGexSny film. It was found that using metallic Sn as nanoparticles and Si1-x-yGexSny as the matrix leads to a large enhancement of the carrier concentration and a very small decrease in carrier mobility. As a result, the electrical conductivity and power factor of the modulation doped Si1-x-yGexSny alloy were greatly improved. The findings of this study present emerging opportunities for the modulation of Si integration thermoelectrics as wearable devices charged by body temperature.

UR - http://www.scopus.com/inward/record.url?scp=85089817451&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85089817451&partnerID=8YFLogxK

U2 - 10.1063/5.0012087

DO - 10.1063/5.0012087

M3 - Article

AN - SCOPUS:85089817451

SN - 0003-6951

VL - 117

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 053903

ER -