TY - GEN
T1 - Resolution performance of programmable proximity aperture MeV ion beam lithography system
AU - Gorelick, Sergey
AU - Sajavaara, Timo
AU - Laitinen, Mikko
AU - Puttaraksa, Nitipon
AU - Whitlow, Harry J.
N1 - Funding Information:
This paper presents research results of the Belgian Programme on Interuniversity Attraction Poles, initiated by the Belgian Federal Science Policy Office. The scientific responsibility rests with its authors. D.A. Paley was supported by the National Science Foundation Graduate Research Fellowship, the Princeton University Gordon Wu Graduate Fellowship, and the Pew Charitable Trust grant 2000-002558. N.E. Leonard was partially supported by ONR grants N00014–02–1–0861 and N00014– 04–1–0534.
PY - 2007
Y1 - 2007
N2 - An ion beam lithography system for light and heavy ions has been developed at the University of Jyväskylä's Accelerator Laboratory. The system employs a programmable proximity aperture to define the beam. The proximity aperture is made up of four Ta blades with precise straight edges that cut the beam in the horizontal and vertical directions. The blade positions and dimensions are controlled by a pair of high-precision linear-motion positioners. The sample is mounted on a X-Y-Z stage capable of moving with 100 nm precision steps under computer control. The resolution performance of the system is primarily governed by the proximity aperture. Pattern edge sharpness is set by the beam divergence, aperture blade straightness, and secondary and scattered particles from the aperture blade edges. Ray tracing simulations using object oriented toolkit GEANT4 were performed to investigate the beam spatial resolution on the sample defined by the proximity aperture. The results indicate that the edge-scattering does not significantly affect the pattern edge sharpness.
AB - An ion beam lithography system for light and heavy ions has been developed at the University of Jyväskylä's Accelerator Laboratory. The system employs a programmable proximity aperture to define the beam. The proximity aperture is made up of four Ta blades with precise straight edges that cut the beam in the horizontal and vertical directions. The blade positions and dimensions are controlled by a pair of high-precision linear-motion positioners. The sample is mounted on a X-Y-Z stage capable of moving with 100 nm precision steps under computer control. The resolution performance of the system is primarily governed by the proximity aperture. Pattern edge sharpness is set by the beam divergence, aperture blade straightness, and secondary and scattered particles from the aperture blade edges. Ray tracing simulations using object oriented toolkit GEANT4 were performed to investigate the beam spatial resolution on the sample defined by the proximity aperture. The results indicate that the edge-scattering does not significantly affect the pattern edge sharpness.
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U2 - 10.1557/proc-1020-gg03-04
DO - 10.1557/proc-1020-gg03-04
M3 - Conference contribution
AN - SCOPUS:44449089706
SN - 9781558999800
T3 - Materials Research Society Symposium Proceedings
SP - 67
EP - 72
BT - Ion-Beam-Based Nanofabrication
PB - Materials Research Society
T2 - Ion-Beam-Based Nanofabrication
Y2 - 10 April 2007 through 12 April 2007
ER -