Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition

K. Ishii, D. Isshiki, Y. Ohki, H. Nishikawa, M. Takiyama

研究成果: Article › 査読

本文言語	English
ページ（範囲）	205-211
ジャーナル	Japanese Journal of Applied Physics
巻	34
出版ステータス	Published - 1995 1月 1

引用スタイル

@article{40a91f3d0a864e0eb44b985b8e27c73d,

title = "Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition",

author = "K. Ishii and D. Isshiki and Y. Ohki and H. Nishikawa and M. Takiyama",

year = "1995",

month = jan,

day = "1",

language = "English",

volume = "34",

pages = "205--211",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

}

TY - JOUR

T1 - Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition

AU - Ishii, K.

AU - Isshiki, D.

AU - Ohki, Y.

AU - Nishikawa, H.

AU - Takiyama, M.

PY - 1995/1/1

Y1 - 1995/1/1

M3 - Article

SN - 0021-4922

VL - 34

SP - 205

EP - 211

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

ER -