Sidegating effect of GaN MESFETs grown on sapphire substrate

T. Egawa; H. Ishikawa; T. Jimbo; M. Umeno

doi:10.1049/el:19980423

Sidegating effect of GaN MESFETs grown on sapphire substrate

T. Egawa, H. Ishikawa, T. Jimbo, M. Umeno

研究成果: Article › 査読

7 被引用数 (Scopus)

抄録

A GaN metal semiconductor field effect transistor (MESFET) with 2μm gate-length and 200 μm gate-width has been fabricated on a sapphire substrate. The electron mobilities for the n-GaN layer were 585cm²/V·s with a carrier concentration of 1.1 x 10¹⁷cm^-3 at 300K, and 1217cm²/V·s with 2.4 ×10¹⁶cm^-3 at 77K. A GaN MESFET showed a transconductance of 31 mS/mm and a drain-source current of 288mA/mm. The sidegating effect was observed when the negative bias was applied to the sidegate electrode.

本文言語	English
ページ（範囲）	598-600
ページ数	3
ジャーナル	Electronics Letters
巻	34
号	6
DOI	https://doi.org/10.1049/el:19980423
出版ステータス	Published - 1998 3月 19
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

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10.1049/el:19980423

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title = "Sidegating effect of GaN MESFETs grown on sapphire substrate",

abstract = "A GaN metal semiconductor field effect transistor (MESFET) with 2μm gate-length and 200 μm gate-width has been fabricated on a sapphire substrate. The electron mobilities for the n-GaN layer were 585cm2/V·s with a carrier concentration of 1.1 x 1017cm-3 at 300K, and 1217cm2/V·s with 2.4 ×1016cm-3 at 77K. A GaN MESFET showed a transconductance of 31 mS/mm and a drain-source current of 288mA/mm. The sidegating effect was observed when the negative bias was applied to the sidegate electrode.",

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T1 - Sidegating effect of GaN MESFETs grown on sapphire substrate

AU - Egawa, T.

AU - Ishikawa, H.

AU - Jimbo, T.

AU - Umeno, M.

PY - 1998/3/19

Y1 - 1998/3/19

N2 - A GaN metal semiconductor field effect transistor (MESFET) with 2μm gate-length and 200 μm gate-width has been fabricated on a sapphire substrate. The electron mobilities for the n-GaN layer were 585cm2/V·s with a carrier concentration of 1.1 x 1017cm-3 at 300K, and 1217cm2/V·s with 2.4 ×1016cm-3 at 77K. A GaN MESFET showed a transconductance of 31 mS/mm and a drain-source current of 288mA/mm. The sidegating effect was observed when the negative bias was applied to the sidegate electrode.

AB - A GaN metal semiconductor field effect transistor (MESFET) with 2μm gate-length and 200 μm gate-width has been fabricated on a sapphire substrate. The electron mobilities for the n-GaN layer were 585cm2/V·s with a carrier concentration of 1.1 x 1017cm-3 at 300K, and 1217cm2/V·s with 2.4 ×1016cm-3 at 77K. A GaN MESFET showed a transconductance of 31 mS/mm and a drain-source current of 288mA/mm. The sidegating effect was observed when the negative bias was applied to the sidegate electrode.

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JO - Electronics Letters

JF - Electronics Letters

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Sidegating effect of GaN MESFETs grown on sapphire substrate

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