@inproceedings{0eb23b029c43414d9ba80cbd63cbc5af,
title = "Simulation of back-electrode effects on lags and current collapse in field-plate AlGaN/GaN HEMTs",
abstract = "Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs with a back electrode is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in reducing current collapse when the acceptor density is high. On the other hand, the introduction of back electrode is effective in reducing current collapse particularly when the acceptor density is relatively low. It is also shown that applying a negative voltage to the back electrode is not so effective in reducing current collapse when the deep donor acts as an electron trap.",
keywords = "Back electrode, Current collapse, Field plate, GaN, HEMT",
author = "K. Horio and H. Onodera and T. Fukai",
year = "2013",
month = aug,
day = "9",
language = "English",
isbn = "9781482205848",
series = "Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013",
pages = "497--500",
booktitle = "Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013",
note = "Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 ; Conference date: 12-05-2013 Through 16-05-2013",
}