抄録
Two-dimensional analysis of off-state drain currentdrain voltage characteristics in AlGaN/GaN HEMTs is performed; where two cases with a single passivation layer (SiN) and double passivation layers (thin SiN and high-k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly when comparing at the same insulator thickness, because the electric field at the drain edge of the gate is reduced. It is also shown that in the case of double passivation layers, the breakdown voltage becomes higher when the relative permittivity of the second passivation layer becomes higher.
| 本文言語 | English |
|---|---|
| ホスト出版物のタイトル | Informatics, Electronics and Microsystems - TechConnect Briefs 2017 |
| 出版社 | TechConnect |
| ページ | 39-42 |
| ページ数 | 4 |
| 巻 | 4 |
| ISBN（電子版） | 9780998878218 |
| 出版ステータス | Published - 2017 |
| イベント | 11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference - Washington, United States 継続期間: 2017 5月 14 → 2017 5月 17 |
Other
| Other | 11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference |
|---|---|
| 国/地域 | United States |
| City | Washington |
| Period | 17/5/14 → 17/5/17 |
ASJC Scopus subject areas
- 燃料技術
- 表面、皮膜および薄膜
- バイオテクノロジー
- 流体および伝熱