Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. The field-plate length LFP and the thickness of SiO2 passivation layer Ti are varied as parameters. It is shown that the drain lag is not removed when Ti is thick even if LFP is longer than the length of surface-state region Ls. But when Ti becomes thinner than 0.02 μm, the drain lag, gate lag and current slump are completely removed by introducing a field plate longer than Ls because the surface-state effects may be masked. By carefully examining the LFP dependence of lags and current collapse for Ti = 0.02 μm, they are found to be completely removed even if LFP is alittle shorter than Ls.
|ホスト出版物のタイトル||Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016|
|出版ステータス||Published - 2016|
|イベント||10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference - Washington, United States|
継続期間: 2016 5月 22 → 2016 5月 25
|Other||10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference|
|Period||16/5/22 → 16/5/25|
ASJC Scopus subject areas