@inproceedings{d4e666aa4ac540088583b3cb16f0f151,
title = "Simulation of device-structure dependence of surface-related kink phenomena in GaAs FETs",
abstract = "The kink (or an abnormal increase in output conductance with the drain voltage) in GaAs FETs can occur due to a space-charge effect originated from generated hole capturing by surface states around the gate. Here, device-structure dependence of kink phenomena in GaAs MESFETs is studied particularly by simulating structures that are intended to reduce the surface-state effects at the source side, such as a recessed-gate structure and a structure with n+-source region.",
keywords = "GaAs MESFET, Impact ionization, Kink, Recessed-gate structure, Surface state",
author = "A. Wakabayashi and Y. Kazami and J. Ozawa and Y. Mitani and K. Horio",
year = "2003",
month = dec,
day = "1",
language = "English",
isbn = "0972842209",
series = "2003 Nanotechnology Conference and Trade Show - Nanotech 2003",
pages = "8--11",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2003 Nanotechnology Conference and Trade Show - Nanotech 2003",
note = "2003 Nanotechnology Conference and Trade Show - Nanotech 2003 ; Conference date: 23-02-2003 Through 27-02-2003",
}