Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs

H. Hanawa; Y. Satoh; Kazushige Horio

Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs

H. Hanawa, Y. Satoh, Kazushige Horio

研究成果: Conference contribution

抄録

Two-dimensional analysis of breakdown characteristics in AlGaN/GaN HEMTs is performed as parameters of relative permittivity of the passivation layer ϵ_r and its thickness d. It is shown that as ϵ_r increases, the off-state breakdown voltage V_br increases, because the electric field at the drain edge of the gate is weakened and the buffer leakage current is reduced. It is also shown that V_br increases as d increases. It is concluded that AlGaN/GaN HEMTs with a high-k and thick passivation layer should have high breakdown voltages.

本文言語	English
ホスト出版物のタイトル	NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015
出版社	Taylor and Francis Inc.
ページ	266-269
ページ数	4
巻	4
ISBN（電子版）	9781498747301
出版ステータス	Published - 2015
イベント	10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference - Washington, United States 継続期間: 2015 6月 14 → 2015 6月 17

Other

Other	10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference
国/地域	United States
City	Washington
Period	15/6/14 → 15/6/17

ASJC Scopus subject areas

表面、皮膜および薄膜
流体および伝熱
バイオテクノロジー
燃料技術

他のファイルとリンク

引用スタイル

Hanawa, H, Satoh, Y & Horio, K 2015, Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs. in NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. vol. 4, Taylor and Francis Inc., pp. 266-269, 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference, Washington, United States, 15/6/14.

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title = "Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs",

abstract = "Two-dimensional analysis of breakdown characteristics in AlGaN/GaN HEMTs is performed as parameters of relative permittivity of the passivation layer ϵr and its thickness d. It is shown that as ϵr increases, the off-state breakdown voltage Vbr increases, because the electric field at the drain edge of the gate is weakened and the buffer leakage current is reduced. It is also shown that Vbr increases as d increases. It is concluded that AlGaN/GaN HEMTs with a high-k and thick passivation layer should have high breakdown voltages.",

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language = "English",

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booktitle = "NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015",

publisher = "Taylor and Francis Inc.",

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T1 - Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs

AU - Hanawa, H.

AU - Satoh, Y.

AU - Horio, Kazushige

PY - 2015

Y1 - 2015

N2 - Two-dimensional analysis of breakdown characteristics in AlGaN/GaN HEMTs is performed as parameters of relative permittivity of the passivation layer ϵr and its thickness d. It is shown that as ϵr increases, the off-state breakdown voltage Vbr increases, because the electric field at the drain edge of the gate is weakened and the buffer leakage current is reduced. It is also shown that Vbr increases as d increases. It is concluded that AlGaN/GaN HEMTs with a high-k and thick passivation layer should have high breakdown voltages.

AB - Two-dimensional analysis of breakdown characteristics in AlGaN/GaN HEMTs is performed as parameters of relative permittivity of the passivation layer ϵr and its thickness d. It is shown that as ϵr increases, the off-state breakdown voltage Vbr increases, because the electric field at the drain edge of the gate is weakened and the buffer leakage current is reduced. It is also shown that Vbr increases as d increases. It is concluded that AlGaN/GaN HEMTs with a high-k and thick passivation layer should have high breakdown voltages.

KW - Breakdown voltage

KW - GaN

KW - HEMT

KW - High-k passivation layer

KW - Two-dimensional analysis

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M3 - Conference contribution

AN - SCOPUS:84983246770

VL - 4

SP - 266

EP - 269

BT - NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015

PB - Taylor and Francis Inc.

T2 - 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference

Y2 - 14 June 2015 through 17 June 2015

ER -

Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs

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Other

ASJC Scopus subject areas

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