抄録
A numerical simulation of GaAs MESFETs with semiinsulating substrates impurity-compensated to deep levels is carried out by considering the impact ionisation of the carriers. It is shown that in cases where Cr acts as a hole trap, an increase in drain conductance (‘kink’) arises because holes that are generated by impact ionisation flow into the substrate and are captured by the traps to strongly modulate the space-charge distributions.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1128-1130 |
| ページ数 | 3 |
| ジャーナル | Electronics Letters |
| 巻 | 29 |
| 号 | 12 |
| DOI | |
| 出版ステータス | Published - 1993 6月 |
ASJC Scopus subject areas
- 電子工学および電気工学