We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep acceptor and the field plate affect lag phenomena and current collapse. It is shown that the drain lag and current collapse could be reduced by introducing a field plate, as in a case with a deep acceptor compensated by a deep donor in the buffer layer. This reduction occurs because electron trapping by the deep acceptors is weakened by the field plate. The dependence on insulator thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the current collapse of AlGaN/GaN HEMTs.
|NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015
|Taylor and Francis Inc.
|Published - 2015
|10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference - Washington, United States
継続期間: 2015 6月 14 → 2015 6月 17
|10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference
|15/6/14 → 15/6/17
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